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| Datasheet File OCR Text: |
| NTE471 Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz Description: The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability. Features: D Better than 15dB Gain at 30MHz and 100W (CW/PEP) D Diffused Emitter Ballasting D Withstands Infinite Mismatch at Operating Conditions D Low Inductance Stripline Package D Frequency = 30MHz D Power Out = 100 Watts D Voltage = 28 Volts D Power Gain = 15dB Absolute Maximum Ratings: (TC = +25C unless otherweise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Device Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270W Maximum Junction Temperatures, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Dynamic Characteristics Power Output Power Gain Capacitance PO Pg Cob VCE = 28V, f = 30MHz VCE = 28V, f = 30MHz VEB = 30V, IE = 0, f = 1MHz 100 - - 250 - - - W dB pF 15.6 16.0 Symbol ICES Test Conditions VCE = 30V, VBE = 0 Min - 36 65 4 10 Typ - - - - 50 Max 15 - - - - Unit mA V V V V(BR)CEO IC = 100mA, IB = 0, Note 1 V(BR)CES IC = 100mA, VBE = 0, Note 1 V(BR)EBO IE = 10mA, IC = 0 hFE VCE = 5V, IC = 5A Note 1. Pulsed through a 25mH inductor. .725 (18.42) E .250 (6.35) B .225 (5.72) E C .127 (3.17) Dia (2 Holes) 1.061 (26.95) Ceramic Cap .480 (12.1) Dia .260 (6.6) .065 (1.68) .975 (24.77) .095 (2.42) |
Price & Availability of NTE471
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